? 2011 ixys corporation, all rights reserved ds99812a(11/11) v dss = 500v i d25 = 62a r ds(on) 100m n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c62a i dm t c = 25 c, pulse width limited by t jm 150 a i a t c = 25 c80a e as t c = 25 c5j p d t c = 25 c 800 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms, t = 1minute 2500 v~ i isol 1ma, t = 1s 3000 v~ m d mounting torque for base plate 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g IXTN62N50L symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 500 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 1 ma r ds(on) v gs = 20v, i d = 0.5 ? i d25 , note 1 100 m features z international standard package z low intrinsic gate resistance z minibloc with aluminum nitride isolation z fast intrinsic diode z extended fbsoa z avalanche rated z low r ds(on) and q g z low package inductance advantages z high power density z easy to mount z space savings applications z programmable loads z dc-dc converters z current regulators z battery chargers z dc choppers z temperature and lighting controls linear tm power mosfet w/extended fbsoa minibloc e153432 g d s s g = gate d = drain s = source either source terminal s can be used as the source terminal or the kelvin source (gate return) terminal.
ixys reserves the right to change limits, test conditions, and dimensions. IXTN62N50L symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 10 15 20 s c iss 11.5 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1460 pf c rss 210 pf t d(on) 36 ns t r 85 ns t d(off) 110 ns t f 75 ns q g(on) 550 nc q gs v gs = 20v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 115 nc q gd 180 nc r thjc 0.156 c/w r thcs 0.05 c/w safe operating area specification symbol test conditions characteristic values min. typ. max. soa v ds = 400v, i d = 750ma, t c = 90 c 300 w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 62 a i sm repetitive, pulse width limited by t jm 176 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 500 ns ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. i f = i s , v gs = 0v -di/dt = 100a/ s, v r = 100v resistive switching times v gs = 15v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 2 (external) (m4 screws (4x) supplied) sot-227b (ixtn) outline
? 2011 ixys corporation, all rights reserved IXTN62N50L fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 0123456 v ds - volts i d - amperes v gs = 20v 16v 14v 10 v 7 v 8 v 9 v 12 v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 0 2 4 6 8 101214161820 v ds - volts i d - amperes v gs = 20v 16v 14 v 8 v 7 v 9 v 10 v 12 v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 02468101214 v ds - volts i d - amperes 8v 7v 6v v gs = 20v 14v 9 v 10 v 12 v fig. 4. r ds(on) normalized to i d = 31a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 62a i d = 31a fig. 5. r ds(on) normalized to i d = 31a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 0 20406080100120140 i d - amperes r ds(on) - normalized v gs = 20v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 70 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTN62N50L fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 4567891011121314 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 0 102030405060708090100 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 40 80 120 160 200 240 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 18 20 0 50 100 150 200 250 300 350 400 450 500 550 q g - nanocoulombs v gs - volts v ds = 250v i d = 31a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w
? 2011 ixys corporation, all rights reserved IXTN62N50L ixys ref: t_62n50l(9n) 11-04-11-b fig. 13. forward-bias safe operating area @ t c = 25oc 0.1 1 10 100 1000 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100s 10ms 1ms r ds(on) limit dc 25s fig. 14. forward-bias safe operating area @ t c = 90oc 0.1 1 10 100 1000 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 90oc single pulse 100s 10ms 1ms r ds(on) limit dc 25s
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